Development of Radiation Hard 150nm Standard Cell Library

Seminar | 336 | 14:30

João Baptista Martins,

Federal University of Santa Maria

Abstract:

The effects produced by radiation on integrated circuits can be classified into Single Event Effects (SEE) related to transient problems and Total Ionization Dose (TID) effects that arise due to the long exposure time ionizing radiation. The mitigation of these effects on integrated circuits can be done in three ways: Manufacturing Process Level, Architectural Level (redundancy) and Layout Level. The work presented here deals with the third way of mitigation, that is, the cell library design of radiation tolerant integrated circuits. Designed and manufactured in silicon on 150nm technology, the SMDH-RH library is based on the use of guard rings and the application of closed geometry techniques (ELT – Enclosed Layout Transistor). The library includes simple and complex digital logic gates. It was tested in space as payload of a Nanosatellite (NanosatC-Br1), launched in space in 2014 and in activity still, being approved its operation and functionality.

Bio

PhD João Baptista Martins: Degree in electrical engineering from the Federal University of Santa Maria (1984), master’s degree in electrical engineering from the Federal University of Santa Maria (1993) and PhD in Computer Science from the Federal University of Rio Grande do Sul – UFRGS (2001 – Microelectronics Area) . CNPq Researcher, leader of Microelectronics Group (GMICRO/UFSM) and Full Professor of Federal University of Santa Maria (RS/Brazil). Martins has expertise in the areas of Electrical Engineering and Computing, with emphasis in Hardware, working mainly in the following themes: Microelectronics, FPGA, VHDL, CAD and Low Power.

He coordinates several projects: FINEP, CNPq, CAPES and FAPERGS.

Martins is CEO of SMDH (Santa Maria Design House – www.smdh.org).

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